AST 2800 RTP 退火炉备件销售
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“AST 2800 RTP 退火炉备件销售”参数说明
| 型号： | AST2800 | 规格： | AST2800 |
| 商标： | AST2800 | 包装： | AST2800 |
“AST 2800 RTP 退火炉备件销售”详细介绍
PA3110
硬盘备份
设备调试
技术服务
石英件原厂备件提供
Robot 翻新
Robot controller 维修
二手设备提供
AST2800 设备
FEATURES/BENEFITS
? Independent lamp control for improved temperature uniformity across the wafer to prevent slip formation
? Dynamic individual lamp adjustment in any step for excellent uniformity during all process steps
? OH-pyrometry with low temperature option for exact and reliable pyrometer-controlled annealing even for contact alloying (>200 degrees C)
? Precise ambient control to prevent haze formation at oxygen sensitive processes
? Liner plates to protect quartz tube from condensating contaminants, easy to change and clean
? Automated graphite box handling to reduce thermal decomposition
? Hydrogen capability for reducing atmosphere to avoid haze
? Si monitor wafers for easy and economical uniformity optimization
APPLICATIONS
Contact Alloying:
? alloying of Ge/Au/Ni based layers for ohmic contacts
? Shottky contact formation
? process temperature: ~ 400 degree C
Implant Anneal
? thermal activation of implanted dopants
? GaAs: Si for n-type doping
? shallow channel implant
? contact implant
? process temperature: ~ 800 - 950 degree C
硬盘备份
设备调试
技术服务
石英件原厂备件提供
Robot 翻新
Robot controller 维修
二手设备提供
AST2800 设备
FEATURES/BENEFITS
? Independent lamp control for improved temperature uniformity across the wafer to prevent slip formation
? Dynamic individual lamp adjustment in any step for excellent uniformity during all process steps
? OH-pyrometry with low temperature option for exact and reliable pyrometer-controlled annealing even for contact alloying (>200 degrees C)
? Precise ambient control to prevent haze formation at oxygen sensitive processes
? Liner plates to protect quartz tube from condensating contaminants, easy to change and clean
? Automated graphite box handling to reduce thermal decomposition
? Hydrogen capability for reducing atmosphere to avoid haze
? Si monitor wafers for easy and economical uniformity optimization
APPLICATIONS
Contact Alloying:
? alloying of Ge/Au/Ni based layers for ohmic contacts
? Shottky contact formation
? process temperature: ~ 400 degree C
Implant Anneal
? thermal activation of implanted dopants
? GaAs: Si for n-type doping
? shallow channel implant
? contact implant
? process temperature: ~ 800 - 950 degree C
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